Developing cutting-edge Defense and Aerospace technology

Renesas' history and experience in the space, defense and aerospace industries spans decades, beginning with the founding of Radiation, Inc. in 1950 through the recent acquisition of IDT’s industry-leading RF and microwave portfolio. Renesas leverages this experience to deliver efficient, thermally optimized and reliable SMD, MIL-STD-883 (/883) and Class-V/Q products for the defense, high-reliability (Hi-Rel), and radiation hardened / space marketplaces.

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Renesas' RF products are best-in-class in dealing with unwanted interference from an increasingly crowded radio spectrum. Today’s higher data rates drive the need for better radio signal-to-noise ratios, which translates to the need for IDT’s higher linearity RF components. RF solutions from IDT address the evolving needs of a wide range of applications, including cellular 4G and 5G base stations, Active Antenna Systems for both sub-6 GHz and mmWave frequencies, and Satcom phased array antennas.

Patented, Industry-leading RF Innovations:

Glitch-Free™ Technology: IDT’s digital step attenuators (DSA) virtually eliminate transient overshoot that occurs during MSB attenuation state transi­tions of standard DSAs. With Glitch-Free technology, amplifier damage and loss of information at the ADC are avoided.

FlatNoise™ Technology: IDT’s variable gain amplifier (VGA) noise figure is kept virtually flat in the criti­cal region, while gain is reduced. This greatly eases design constraints for radio engineers by enhancing signal-to-noise ratio (SNR).

Zero-Distortion™ Technology: IDT’s RF amplifiers and RF mixers improve SNR by reducing the noise floor and third order intermodulation distortion. This is important for crowded spectrum envi­ronments, as it enhances quality-of-service (QoS) and frees up under-utilized spectrum.

K|Z| Constant Impedance Technology: IDT’s RF switches maintain nearly constant impedance when switching between RF ports. By controlling the impedance during the switching process voltage standing wave ratio (VSWR), transients are minimized. This improves switch reliability, reduces voltage stresses on downstream components, and improves overall system performance.

KLIN Constant Linearity Technology: IDT’s variable gain amplifiers maintain constant high linearity as gain is adjusted. As the gain is reduced, the linearity (OIP3) remains constant in the critical region. This prevents in­termodulation distortion from degrading as the gain is reduced.

  DESCRIPTION PART NUMBER
Renesas Phased Array Beamformers Beamformer IC: Ku-Band SatCom Receive SiGe IC F6101
Renesas Phased Array Beamformers Beamformer IC: Ka-Band SatCom Receive SiGe IC F6102
Renesas Phased Array Beamformers Beamformer IC: CDL-Band SatCom Receive SiGe IC F6103
Renesas Phased Array Beamformers Beamformer IC: Ku-Band SatCom Transmit SiGe IC F6501
Renesas Phased Array Beamformers Beamformer IC: Ka-Band SatCom Transmit SiGe IC F6502
Renesas Phased Array Beamformers Beamformer IC: CDL-Band SatCom Transmit SiGe IC F6503
Renesas RF Amplifiers chip High-gain amplifier: Single-ended Input, Differential Output High-Gain RF Amplifier F1129
Renesas RF Amplifiers chip High-gain amplifier: Differential Input, Single-ended Output High-Gain RF Amplifier F1429
Renesas RF Amplifiers chip High-gain amplifier: High-Gain, Two-stage RF Amplifier F1478
Renesas RF Mixers chip

RF Mixer: VersaMixer™ Wideband / Low-Power Dual Channel

F1192B
Renesas RF Mixers chip RF Mixer: VersaMixer™ Wideband / Low-Power Single Channel F1792
Renesas RF Switches package RF Switch: High Linearity Broadband SP2T 30 MHz to 6 GHz RF Switch F2977
Renesas RF Switches package RF Switch: High Reliability SP5T RF Switch F2915
Renesas RF and µW Synthesizers package RF Synthesizer: Wideband 18 GHz RF and Microwave Synthesizer 8V97003

Renesas is a major supplier to the military and aerospace industries. Our product development methodologies reflect experience designing products to meet the highest standards for reliability and performance in challenging environments.

To meet the high-reliability demands of military applications, we test and guarantee Total Ionizing Dose hardness on a wafer-by-wafer basis to MIL-STD-883 Method 1019 using an in-house Gammacell 220™ 60Co irradiator, at both high-dose (50rad(Si)/s) and low-dose rates (0.01rad(Si)/s).

  DESCRIPTION PART NUMBER
Renesas ISL72814SEH to 73814SEH microchip 16 ch. Current Driver Circuit: Driving RF and waveguide switches ISL72814SEH
Renesas ISL7091SEH microchip Voltage References: Precision reference for ADCs ISL71091SEH33
Renesas ISL7457SRH Quad CMOS Driver: Driving imaging sensors ISL7457SRH
Renesas ISL70591SEH microchip with satellite and earth in the background 100uA/1mA Current Sources: Excitation sources for analog sensors ISL70591SEH
Renesas ISL7026-28SEH microchip with satellite and earth in the background CANBus Transcievers: Communication between SBC and TT&C ISL72026SEH
Renesas ISL70040SEH microchip Low Side GaN FET driver: Power DC-DC converters ISL70040SEH
Renesas ISL8845SEH chip with satelite and communications tower image in the background PWM Controller: Power DC-DC converters ISL78845ASRH
Renesas ISL70321SEH chip Quad Sequencer: Sequencing the voltage rails of the central computer ISL70321SEH
Renesas HS-4080AEH Full-Bridge Mosfet Driver: Motor drive in AOC system HS-4080AEH
Renesas ISL75052SEH chip Low Dropout Regulators: Linear regualtor for peripheral and noise sensitive rails ISL75052SEH

Selection Guide

When Failure is not an option™ Renesas offers highly reliable, efficient and accurate radiation-hardened ICs for space applications and other radiation environments.

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White Paper

Gaining Precision in Space Applications: Using Voltage References for Precision Signal Paths

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Product Overview

Renesas' RF products are best-in-class in dealing with unwanted interference from an increasingly crowded radio spectrum.

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