Magnetoresistive RAM (MRAM)
A type of non-volatile memory technology that uses magnetic fields to store and access data. MRAM is based on the magnetoresistive effect, which is a change in the electrical resistance of a material when it is exposed to a magnetic field.
| PRODUCT | PRICE | AvailabilityRefresh Stock | Manufacturer | Information | FOR USE WITH | TYPE |
|---|---|---|---|---|---|---|
NVRAM MRAM Parallel 4M-Bit 3.3V 44-Pin TSOP-II |
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Teledyne e2v |
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NVRAM MRAM Parallel 4M-Bit 3.3V 44-Pin TSOP-II |
|
Teledyne e2v |
|
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M3004401 4MB HIGH PERFORMANCE SPI 35MHZ MRAM |
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Renesas Electronics |
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M3004401 4MB HIGH PERFORMANCE SPI 35MHZ MRAM |
|
Renesas Electronics |
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