QH12BZ600
Diode Switching 600V 12A 3-Pin TO-263AB T/R
- RoHS 10 Compliant
- Tariff Charges
The QH12BZ600 has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers.
- Low QRR, low IRRM, low tRR
- High dIF/dt capable (1000 A / µs)
- Soft recovery
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 12 | ||
| TO-263AB | ||
| Single | ||
| 350 | ||
| 3.1 | ||
| 3 | ||
| 150 °C | ||
| H Series | ||
| 600 | ||
| 11.6 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | UNKNOWN |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |