TC58BVG0S3HBAI6

The TC58BVG0S3HBAI6 is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages)

• Organization x8 Memory cell array 2112 × 64K × 8 Register 2112× 8 Page size 2112 bytes Block size (128K + 4K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, ECC Status Read • Mode control Serial input/output Command control • Number of valid blocks Min 1004 blocks Max 1024 blocks • Power supply VCC = 2.7V to 3.6V • Access time Cell array to register 40 µs typ. Serial Read Cycle 25 ns min (CL=50pF) • Program/Erase time Auto Page Program 330 µs/page typ. Auto Block Erase 2.5 ms/block typ. • Operating current Read (25 ns cycle) 30 mA max. Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 50 µA max