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CKC33C884KCGLCAUTO7805

Stacked Multilayer Ceramic Capacitor, 0.88 uF, 500 V, ± 10%, C0G (NP0), 3640 [9210 Metric], 10.2 mm Stack Height

Manufacturer:KEMET
Avnet Manufacturer Part #: CKC33C884KCGLCAUTO7805
Secondary Manufacturer Part#: CKC33C884KCGLCAUTO7805
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

KC-LINK™ with KONNEKT™ technology surface mount multilayer ceramic chip capacitors are designed for high efficiency and high density power applications. KONNEKT high density packaging technology uses an innovative Transient Liquid Phase Sintering (TLPS) material to create a surface mount multi-chip solution for high density packaging. By utilizing KEMET's robust and proprietary C0G base metal electrode (BME) dielectric system, these capacitors are well suited for power converters, inverters, snubbers and resonators where high efficiency is a primary concern. KONNEKT technology enables a low loss, low inductance package capable of handling extremely high ripple currents with no change in capacitance versus DC voltage and negligible change in capacitance versus temperature. With an operating temperature range up to 150°C, these capacitors can be mounted close to fast switching semiconductors in high power density applications, which require minimal cooling.

  • Commercial and automotive grade (AEC-Q200) qualified
  • Extremely high power density and ripple current capability
  • Extremely low equivalent series resistance (ESR), extremely low equivalent series inductance (ESL)
  • Low-loss orientation option for higher current handling capability
  • No capacitance shift with voltage, no piezoelectric noise, high thermal stability
  • Surface mountable using standard MLCC reflow profiles
  • Exhibits high mechanical robustness compared to other dielectric technologies
  • Application include data centres, EV/HEV, LLC resonant converters, switched tank converter
  • Used in photovoltaic systems, power converter, inverter, DC link, snubber, wireless charging systems
  • Suitable for wide bandgap (WBG), silicon carbide (SiC) and gallium nitride (GaN) systems

Technical Attributes

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Description Value
0.88 µF
10%
150 °C
-55 °C
AEC-Q200
10.2 mm
500 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8532240020
Schedule B: 8532240060
In Stock :  0
Additional inventory
Factory Lead Time: 105 Weeks
Price for: Each
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