IS43LQ32256B-062BLI
DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256M X 32 1.8V 200-Pin TFBGA
IS43LQ32256B-062BLI is a 256Mb x 32 8Gbit CMOS LPDDR4 SDRAM. The device is organized as 2 channels per device, and each channel is 8-banks and 16-bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth.
- 8 internal banks per channel, clock-stop capability
- LVSTL (low voltage swing terminated logic) I/O interface
- Internal VREF and VREF training
- 1600MHz clock frequency, 16n pre-fetch DDR architecture
- Single data rate (multiple cycles) command/address bus
- Bidirectional/differential data strobe per byte of data (DQS/DQS#)
- Programmable and on-the-fly burst lengths (BL=16, 32), ZQ calibration
- On-chip temperature sensor whose status can be read from MR4
- 200 ball FBGA package
- Industrial temperature range from -40°C to +95°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 15 Bit | ||
| 1.6 GHz | ||
| 32 Bit | ||
| 8 Gbit | ||
| Mobile LPDDR4 SDRAM | ||
| TFBGA | ||
| Surface Mount | ||
| 1600 MHz | ||
| 256M x 32bit | ||
| 8 Gbit | ||
| Surface Mount | ||
| 200 | ||
| 8 | ||
| 32 Bit | ||
| 32 Bit | ||
| 1.8 V | ||
| -40 to 95 °C | ||
| 256M x 32 | ||
| 200TFBGA | ||
| 200 | ||
| 10 x 14.5 x 0.8 mm | ||
| Industrial | ||
| TFBGA | ||
| 1.8 V | ||
| Mobile LPDDR4 SDRAM |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542320036 |
| Schedule B: | 8542320023 |