IDW15G120C5BFKSA1
Diode Schottky 1.2KV 49A 3-Pin TO-247 Tube
- RoHS 10 Compliant
- Tariff Charges
With CoolSiC™ generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineon’s thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC™ generations.
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 49 A | ||
| TO-247 | ||
| null | ||
| Through Hole | ||
| 1.65 V | ||
| null | ||
| 175 °C | ||
| 170 A | ||
| null | ||
| null | ||
| 1.2 kV | ||
| 82 nC |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |