FM24VN10-G

FM24VN10-G is a 1Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. Unlike EEPROM, the FM24V10 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits.

• 1Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8
• 151-year data retention, No Delayâ„¢ writes, advanced high-reliability ferroelectric process
• Up to 3.4MHz frequency, direct hardware replacement for serial (I²C) EEPROM
• VDD voltage range from 2.0V to 3.6V
• Average VDD current is 175µA maximum at (fSCL = 100KHz)
• Standby current is 90µA typical at (SCL = SDA = VDD)
• Sleep mode current is 5µA typical at (SCL = SDA = VDD)
• Input resistance is 50Kohm min at (for VIN = VIL (max))
• Input pin capacitance is 6pF max at (TA = 25°C, f = 1MHz, VDD = VDD)
• Industrial ambient temperature range from -40°C to +85°C, 8-pin SOIC package