F410MR20W3M1HB11BPSA1
Silicon Carbide MOSFET, FourPack, Quad N Channel, 95 A, 2 kV, 0.0133 Ohm, Module, 50 Pins
Manufacturer:Infineon
Product Category:
Transistors, MOSFETs, Silicon Carbide (SiC) MOSFETs & Modules
Avnet Manufacturer Part #: F410MR20W3M1HB11BPSA1
-
RoHS 10 Compliant -
Tariff Charges
F410MR20W3M1HB11BPSA1 is an EasyPACK™ module with CoolSiC™ Trench MOSFET and PressFIT / NTC. Potential applications include EV charging, energy storage systems (ESS), solar applications, and DC/DC converters.
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
- Overload operation up to 175°C
- Integrated NTC temperature sensor, PressFIT contact technology
- Drain-source voltage is 2000V at Tvj = 25°C
- Continuous DC drain current is 95A at Tvj = 175°C, VGS = 18V, TH = 65°C
- Repetitive peak drain current is 240A ( verified by design, tp limited by Tvjmax)
- Drain-source on-resistance is 8.6mohm typ at VGS = 18V, Tvj = 25°C, ID = 120A
- Total gate charge is 0.47µC typ at VDD = 1200V, VGS = -3V, Tvj = 25°C
- Drain-source leakage current is 0.02µA typ at VDS = 2000V, VGS = -3V, Tvj = 25°C
- Storage temperature range from -40 to 125°C
Technical Attributes
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ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
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