DF17MR12W1M1HFB86BPSA1
Silicon Carbide MOSFET, Booster, Three N Channel, 50 A, 1.2 kV, 0.024 Ohm, Module, 21 Pins
Manufacturer:Infineon
Product Category:
Transistors, MOSFETs, Silicon Carbide (SiC) MOSFETs & Modules
Avnet Manufacturer Part #: DF17MR12W1M1HFB86BPSA1
-
RoHS 10 Compliant -
Tariff Charges
DF17MR12W1M1HFB86BPSA1 is an EasyPACK™ module with CoolSiC™ Trench MOSFET and PressFIT / NTC. It is ideal for solar applications.
- Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
- Low inductive design, high current density
- PressFIT contact technology, integrated NTC temperature sensor
- Rugged mounting due to integrated mounting clamps
- Drain-source voltage is 1200V at Tvj = 25°C
- Continuous DC drain current is 50A at TH = 80°C, Tvj = 175°C, VGS = 18V
- Repetitive peak drain current is 100A (verified by design, tp limited by Tvjmax)
- Drain-source on-resistance is 16.2mohm typ at VGS = 18V, Tvj = 25°C, ID = 50A
- Total gate charge is 0.149µC typ at VDD = 800V, VGS = -3/18V, Tvj = 25°C
- Storage temperature range from -40 to 125°C
Technical Attributes
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ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
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