CY62148ELL-55SXIT

CY62148ELL-55SXIT is a high performance CMOS, 4-Mbit (512K × 8) static RAM organized as 512K words by 8-bits. This device features advanced circuit design to provide ultra low standby current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power-down feature that significantly reduces power consumption when address is not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (active low CE HIGH). The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (active low CE HIGH), Output is disabled (active low OE HIGH), or during an active Write operation (active low CE LOW and WE LOW). Application includes smart alarm systems.

• VCC range from 4.5 to 5.5V, 45ns speed
• Operating ICC range from 3.5mA typ (f=1MHz, VCC=VCC(typ), TA=25°C)
• Standby ISB2 is 2.5µA typ (VCC=VCC(typ), TA=25°C)
• Pin compatible with CY62148B
• Typical active current is 3.5mA at f=1MHz
• Easy memory expansion with active low CE and active low OE features
• Automatic power down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• Input and output capacitance is 10pF max (TA=25°C, f=1MHz, VCC=VCC(typ))
• 32-pin SOIC package, industrial temperature range from -40°C to +85°C