6N136S(TA)-V

The 6N136 device consists of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor. The device is packaged in a 8-pin DIP package and available in wide-lead spacing and SMD option.

• High speed 1Mbit/s
• High isolation voltage between input and output (Viso=5000 Vrms )
• Guaranteed performance from 0°C to 70°C
• Wide operating temperature range of -55°C to 100°C
• Pb free and RoHS compliant
• UL and cUL approved(No. E214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved