SST25VF080B-50-4C-S2AF-T

25 series Serial Flash family features a four-wire, SPIcompatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF080B devices are enhanced with improved operating frequency and lower power consumption. SST25VF080B SPI serial flash memories are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF080B devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.

• Single Voltage Read and Write Operations
  • 2.7-3.6V
• Serial Interface Architecture
  • SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
  • 50/66 MHz conditional
• Superior Reliability
  • Endurance: 100,000 Cycles (typical)
  • Greater than 100 years Data Retention
• Low Power Consumption:
  • Active Read Current: 10 mA (typical)
  • Standby Current: 5 µA (typical)
• Flexible Erase Capability
  • Uniform 4 KByte sectors
  • Uniform 32 KByte overlay blocks
  • Uniform 64 KByte overlay blocks
• Fast Erase and Byte-Program:
  • Chip-Erase Time: 35 ms (typical)
  • Sector-/Block-Erase Time: 18 ms (typical)
  • Byte-Program Time: 7 µs (typical)
• Auto Address Increment (AAI) Programming
  • Decrease total chip programming time over Byte-Program operations
• End-of-Write Detection