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CY62136FV30LL-45ZSXIT

SRAM Chip Async Single 3V 2M-Bit 128K x 16 45ns 44-Pin TSOP-II T/R

Manufacturer:Infineon
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: CY62136FV30LL-45ZSXIT
Secondary Manufacturer Part#: CY62136FV30LL-45ZSXIT
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The CY62136FV30 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90 percent when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected. The input and output pins are placedin a high impedance state when the device is deselected (CE HIGH), the outputs are disabled, both Byte High Enable and Byte Low Enable are disabled or during a write operation. Write to the device by taking Chip Enable and Write Enable inputs LOW. If Byte Low Enable is LOW, then data from I/O pins is written into the location specified on the address pins. If Byte High Enable is LOW, then data from I/O pins is written into the location specified on the address pins. Read from the device by taking Chip Enable and Output Enable LOW while forcing the Write Enable HIGH. If Byte Low Enable is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7. If Byte High Enable is LOW, then data from memory appears on I/O8 to I/O15.

  • Very high speed: 45 ns
  • Temperature ranges
    • Industrial: -40 °C to +85 °C
    • Automotive-A: -40 °C to +85 °C
    • Automotive-E: -40 °C to +125 °C
  • Wide voltage range: 2.20 V to 3.60 V
  • Pin compatible with CY62136V, CY62136CV30/CV33, and CY62136EV30
  • Ultra low standby power
    • Typical standby current: 1 µA
    • Maximum standby current: 5 µA (Industrial)
  • Ultra low active power
    • Typical active current: 1.6 mA at f = 1 MHz (45 ns speed)
  • Easy memory expansion with CE/ and OE/ and features
  • Automatic power down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 44-pin thin small outline package (TSOP) II package

Technical Attributes

Find Similar Parts

Description Value
17 Bit
2 Mbit
Gold|Matte Tin
260
18 mA
45 ns
2 Mbit
Surface Mount
MSL 3 - 168 hours
44
16 Bit
16 Bit
1
128 kWords
-40 to 85 °C
85 °C
-40 °C
44TSOP-II
44
18.52 x 10.26 x 1.04 mm
No
Industrial
TSOP-II
3.6 V
2.2 V
3 V
3.0000 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: NO RECOVERY FEE
ECCN: 3A991B2A
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 56 Weeks
Price for: Each
Quantity:
Min:1000  Mult:1000  
USD $:
1000+
$1.27143
2000+
$1.2027
4000+
$1.17105
8000+
$1.14103
16000+
$1.1125