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GS8161Z36DGD-200V

SRAM Chip Sync Quad 1.8V/2.5V 18M-Bit 512K x 36 6.5ns/3ns 165-Pin FBGA

Manufacturer:Gsi Technology
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: GS8161Z36DGD-200V
Secondary Manufacturer Part#: GS8161Z36DGD-200V
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The GS8161Z36 is an 18Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable, ZZ and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing. The GS8161Z36 may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edge-triggered registers that capture input signals, the device incorporates a rising-edge-triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock. The GS8161Z36 is implemented with GSI's high performance CMOS technology and is available in JEDEC-standard 100-pin TQFP and 165-bump FP-BGA packages.

  • User-configurable Pipeline and Flow Through mode
  • NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization
  • Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs
  • IEEE 1149.1 JTAG-compatible Boundary Scan
  • 2.5 V or 3.3 V +10%/–10% core power supply
  • LBO pin for Linear or Interleave Burst mode
  • Pin-compatible with 2M, 4M, and 8M devices
  • Byte write operation (9-bit Bytes)
  • 3 chip enable signals for easy depth expansion
  • ZZ pin for automatic power-down
  • JEDEC-standard 100-lead TQFP and 165-bump FP-BGA packages

Technical Attributes

Find Similar Parts

Description Value
19 Bit
Flow-Through|Pipelined
200 MHz
SDR
18 Mbit
210@Flow-Through|205@Pipelined mA
2, 2.7 V
6.5@Flow-Through|3@Pipelined ns
18 Mbit
1.7, 2.3 V
Surface Mount
165
36 Bit
36 Bit
4
512 kWords
0 to 85 °C
85 °C
0 °C
165FBGA
165
15 x 13 x 0.94 mm
No
Commercial
FBGA
2.7, 2.7 V
2.3, 2.3 V
2.5, 2.5 V
Synchronous
1.8, 2.5 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: 3A991.B.2.B
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 168 Weeks
Price for: Each
Quantity:
Min:144  Mult:144  
USD $:
144+
$30.4623
288+
$30.30845
576+
$30.1546
864+
$30.00075
1152+
$29.8469