制造商:
Nexperia
PSMN040-100MSEX
Power MOSFET, N Channel, 100 V, 30 A, 36.6 Milliohms, LFPAK33, 4 Pins, Surface Mount
安富利制造商模型#:
PSMN040-100MSEX
RoHS 6 Compliant
PSMN040-100MSEX is a N-channel 100V 36.6mohm standard level MOSFET in LFPAK33 designed specifically for high-power PoE applications. It is a new standard and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of “soft-start”, thermal management, and power density requirements. The applications include high-power PoE applications (60W and higher), IEEE 802.3at, and proprietary solutions.
技术参数
- Enhanced forward biased safe operating area for superior linear mode operation
- Low Rdson for low conduction losses
- Ultra reliable LFPAK33 package for superior thermal and ruggedness performance
- Drain-source voltage is 100V max (Tj ≥ 25 °C; Tj ≤ 175 °C)
- Drain current is 30A max (VGS = 10V; Tj ID drain current = 25°C)
- Total power dissipation is 91W max (Tmb = 25°C)
- Drain-source on-state resistance is 66mohm max (VGS = 10V; ID = 10A; Tj = 100°C
- Gate-drain charge is 10.7nC typ (ID = 10A; VDS = 50V; VGS = 10V; Tj = 25°C)
- Total gate charge is 30nC typ (ID = 10A; VDS = 50V; VGS = 10V; Tj = 25°C)
- 4 leads SOT1210 package, junction temperature range from -55 to 175°C
技术特性
查找类似的料号|
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描述 | 值 |
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导通电阻测试电压 | 10 |
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沟道类型 | N Channel |
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晶体管安装 | Surface Mount |
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引脚数 | 8 |
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最高工作温度 | 175 °C |
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MSL 级别 | MSL 1 - Unlimited |
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功率耗散 | 91 W |
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连续漏极电流Id | 30 A |
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漏源导通电阻 | 36.6 mOhm |
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栅极源极阈值电压最大值 | 4 V |
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漏源电压Vds | 100 V |
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晶体管外壳样式 | LFPAK33 |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | 8541290080 |
| HTSN: | 8541290075 |
文档
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文档
| 标题 | 下载 | 类别 | 发布日期 |
|---|---|---|---|
| NXP PSMN040-100MSE-AN10273-an | Application-Guides | ||
| SPICE thermal model | Technical-Specifications | 20130605 | |
| NXP PSMN040-100MSE-AN11156-an | Application-Guides | ||
| NXP PSMN040-100MSE-AN11243-an | Application-Guides |