Clean, efficient energy and electric mobility are driving demand for new power semiconductor solutions with advanced efficiency, performance and power density. With 30 years of experience in silicon carbide (SiC) technology development, Infineon’s portfolio of CoolSiC™ solutions addresses customer needs for smarter, more efficiency energy generation, transmission and consumption. The portfolio includes CoolSiC™ Schottky diodes, CoolSiC™ hybrid devices, CoolSiC™ MOSFET modules and discretes, plus EiceDRIVER™ gate driver ICs for driving SiC devices.
Infineon's SiC-based CoolSiC™ portfolio
ENTRY-LEVEL BOARD
EVAL-1ED3142MU12F-SiC
NEW! Evaluation Kit - for testing functionalities of SiC. Comes with two Infineon IMZA120R020M1H CoolSiC™ Trench MOSFETs in a TO247-4 package.
Multi-purpose board (to measure the performance of the products)
ADVANCED-LEVEL BOARDS
EVAL_PS_DP_MAIN
CoolSiC™ MOSFET 1200 V Evaluation Platform - Mother Board - intended to evaluate the switching behaviour of the MOSFET for a maximum voltage of 800 V and a maximum pulsed current of 130 A.
EXPERT-LEVEL BOARDS
EVALPSE1BF12SICTOBO1
Evaluation Board designed as bidirectional buck-boost converter for double-pulse measurements as well as functional tests.
Application focus: EV Charging, Energy Storage Systems, UPS
CoolSiC™ Applications and Solutions
Most of the applications surrounding us today are based on silicon (Si). But those applications call for advances in efficiency, power density and new ways to overcome silicon’s performance limitations. SiC technology has reached the tipping point. Today, designers looking to stay competitive and lower long-term system costs are turning to SiC-based technologies.
Some of the most popular applications include:
Electric Vehicle (EV) Charging
CoolSiC™ MOSFETs reduce charging time by half at the same charging station and footprint. One 1200 V SiC MOSFET is sufficient to support a DC-link voltage of 800 V. Doubling the power density allows a component count reduction of a comparable Si solution by 50% thanks to doubled voltage in the switch positions.
Energy Storage Systems (ESS)
CoolSiC™ MOSFET 650 V and 1200 V are cutting losses by 50% for extra energy. As the battery bank makes up the major portion of the total system costs for Energy Storage Systems, a change from silicon superjunction MOSFET to CoolSiC™ MOSFET can lead to approximately 2% extra energy without increasing battery size.
Automotive PowerTrain
Demand for SiC-based power electronics for xEV main inverters is accelerating, especially for the premium car market where high efficiency is key. A recent WLTP study shows in 800 V battery systems, SiC-based main inverters achieve 5–10% more range than Si counterparts.
On-Board Charger (OBC)
Automotive applications are size limited to provide more cabin comfort and design flexibility. CoolSiC™ MOSFETs implemented in size-constrained on-board charging applications enable higher power density, lower cooling effort and fewer passive components.
Servo Motors & Drives
Packaged CoolSiC modules help lower switching losses, allow higher switching speeds, eliminate cooling fans, and allow for higher current operation in integrated servo drives and industrial motors.