WG30R135W1Q
IGBT, 60 A, 1.7 V, 428 W, 1.35 kV, TO-247, 3 Pins
Manufacturer:WeEn Semiconductors
Product Category:
Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: WG30R135W1Q
Secondary Manufacturer Part#: WG30R135W1Q
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RoHS 10 Compliant -
Tariff Charges
WG30R135W1Q is an IGBT. It uses advanced Fine Trench Field-stop technology IGBT with monolithic body diode. This device is part of reverse-conducting of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation. Typical applications include microwave ovens, induction heating, resonant converters, soft switching applications.
- Reverse conducting IGBT with monolithic body diode
- Low conduction losses, EMI improved design
- Positive temperature efficient for easy parallel operating
- Collector-emitter breakdown voltage is 1350V min at VGE = 0V; IC = 1mA
- Diode forward voltage is 1.9V typ at VGE = 0V; IF = 30A; Tj = 25°C
- Zero gate voltage collector current is 100µA max at VCE = 1350V; VGE = 0V; Tj = 25°C
- Gate charge is 157nC typ at VCC = 1080V; IC = 30A; VGE = 15V;Tj = 25°C
- Turn-off delay time is 130nS typ at Tj=25°C;IC=30A; VGE=15V / 0V; RG=10 ohm;Cr=300nF; R=2ohm
- TO247 package
- Maximum operating junction temperature is 175°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1.7 V | ||
| 1.35 kV | ||
| 60 A | ||
| 3 | ||
| 175 °C | ||
| 428 W | ||
| TO-247 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: