VO615A
DIP-4 OPTOCPL 50-600% CTR -e3
- RoHS 10 Compliant
- Tariff Charges
The VO615A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package.
- Temperature range - 55 °C to + 110 °C
- Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak
- Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
- Rated isolation voltage (RMS includes DC) VIOWM = 600
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 60 mA | ||
| 50 mA | ||
| 70 V | ||
| 600@5mA % | ||
| 5000 Vrms | ||
| Through Hole | ||
| 1 | ||
| -55 to 110 °C | ||
| DC | ||
| 4PDIP | ||
| 4 | ||
| 4.83 x 6.81 x 3.81 mm | ||
| PDIP |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541498000 |
| Schedule B: | 8541498000 |