VO615A-1X019T
SMD-4 OPTOCPL 40-80 % CTR, VDE -e3
- RoHS 10 Compliant
 - Tariff Charges
 
The VO615A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package.
- Temperature range - 55 °C to + 110 °C
 - Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak
 - Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
 - Rated isolation voltage (RMS includes DC) VIOWM = 600
 
Technical Attributes
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| Description | Value | |
|---|---|---|
| 60 mA | ||
| 260 | ||
| 50 mA | ||
| 70 V | ||
| 80@10mA % | ||
| 5000 Vrms | ||
| Surface Mount | ||
| 1 | ||
| -55 to 110 °C | ||
| DC | ||
| 4SMD | ||
| 4 | ||
| 4.58 x 6.5 x 3.5 | ||
| SMD | 
ECCN / UNSPSC / COO
| Description | Value | 
|---|---|
| Country of Origin: | RECOVERY FEE | 
| ECCN: | EAR99 | 
| HTSN: | 8541498000 | 
| Schedule B: | 8541498000 |