SI3865DDV-T1-GE3
Power Load Switch, High Side, 1 Output, 12 V, 2.8 A/0.106 ohm out, TSOP-6
- RoHS 10 Compliant
- Tariff Charges
The Si3865DDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.8 V. The Si3865DDV operates on supply lines from 1.5 V to 12 V, and can drive loads up to 2.8 A
- Low RDS(on) TrenchFET®: 1.5 V rated
- 1.5 V to 12 V input
- 1.8 V to 8 V logic level control
- Low profile, small footprint TSOP-6 package
- 2100 V ESD protection on input switch, VON/OFF
- Adjustable slew-rate
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 2.8 A | ||
| 1.8 to 12 V | ||
| Matte Tin | ||
| 260 | ||
| 2.8 A | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 1 | ||
| 6 | ||
| 2 | ||
| 165 mOhm | ||
| 1.8 to 12 V | ||
| -55 to 150 °C | ||
| 150 °C | ||
| -55 °C | ||
| 6TSOP | ||
| 6 | ||
| 3.05 x 1.65 x 1(Max) | ||
| TSOP | ||
| 0.11 Ohm | ||
| High Side |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |