SI2301CDS-T1-E3
P-CHANNEL 20-V (D-S) MOSFET
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Manufacturer:Vishay
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: SI2301CDS-T1-E3
Secondary Manufacturer Part#: SI2301CDS-T1-E3
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RoHS 10 Compliant -
Tariff Charges
Si2301CDS-T1-E3 is a P-channel 20V (D-S) MOSFET. The applications include a load switch.
- TrenchFET® Power MOSFET
- Drain-source breakdown voltage is -20V min (VGS = 0V, ID = - 250µA, TJ = 25°C)
- Gate-source threshold voltage range from -0.4 to 1V (VDS = VGS, ID = - 250µA, TJ = 25°C)
- Continuous drain current is - 3.1A (TJ = 150 °C, TC = 25°C)
- Pulsed drain current is -10A (TA = 25°C)
- Continuous source-drain diode current is -1.3A (TC = 25°C, TA = 25°C)
- Maximum power dissipation is 1.6W (TC = 25°C, TA = 25°C)
- VDS temperature coefficient is -18mV/°C typ (ID = - 250µA, TJ = 25°C)
- Forward transconductance is 9.5S typ (VDS = - 5V, ID = - 2.8A, TJ = 25°C)
- SOT-23 package, operating junction temperature range from -55 to 150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 3.1 | ||
| 112 | ||
| 20 | ||
| 1 | ||
| 3 | ||
| 150 °C | ||
| 1.6 | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
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