IRF640PBF
Power MOSFET, N Channel, 200 V, 18 A, 0.18 ohm, TO-220, Through Hole
- RoHS 10 Compliant
- Tariff Charges
The IRF640PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 175°C Operating temperature
- Easy to parallel
- Simple drive requirement
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 18 A | ||
| 180 mOhm | ||
| 200 V | ||
| 4 V | ||
| 3 | ||
| 150 °C | ||
| 125 W | ||
| TO-220AB | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |