IL4108

The IL410 and IL4108 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin dual in-line package.

High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 2 mA (DC). The use of a proprietary dV/dt clamp results in a static dV/dt of greater than 10 kV/ms. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the phototransistor, disabling the first stage SCR predriver.

The zero cross line voltage detection circuit consists of two enhancement MOSFETS and a photodiode. The inhibit voltage of the network is determined by the enhancement voltage of the N-channel FET. The P-channel FET is enabled by a photocurrent source that permits the FET to conduct the main voltage to gate on the N-channel FET. Once the main voltage can enable the N-channel, it clamps the base of the phototransistor, disabling the first stage SCR predriver.

The 600 V, 800 V blocking voltage permits control of off-line voltages up to 240 VAC, with a safety factor of more than two, and is sufficient for as much as 380 VAC.

The IL410, IL4108 isolates low-voltage logic from 120 VAC, 240 VAC, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays.

• High input sensitivity
• IFT = 2 mA, PF = 1.0
• IFT = 5 mA, PF ??1.0
• 300 mA on-state current
• Zero voltage crossing detector
• 600 V, 800 V blocking voltage
• High static dV/dt 10 kV/µs
• Very low leakage < 10 ?A
• Isolation test voltage 5300 VRMS
• Small 6 pin DIP package
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC