DG211BDQ-T1-E3

DG211BDQ-T1-E3 is an improved quad CMOS analogue switch and is a highly improved version of the industry standard. This device is fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. This quad single-pole single-throw switch is designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. It features true bi-directional performance in the on condition and will block signals to the supply levels in the off condition. The application includes industrial instrumentation, test equipment, communications systems, disk drives, computer peripherals, portable instruments, and sample-and-hold circuits.

• TTL and CMOS compatible logic, ±22V supply voltage rating
• Drain-source on-resistance is 45ohm typ (room, VD = ±10V, IS = 1mA, -40°C to 85°C)
• Single supply operation possible, extended temperature range
• Turn-on time is 300ns max (VS = 10V, room, -40°C to 85°C)
• Charge injection is 1pC typ (CL = 1000pF, Vgen = 0V, Rgen = 0 ohm, -40°C to 85°C)
• Wide analogue signal range, simple logic interface
• Higher accuracy, minimum transients, reduced power consumption
• Space savings (TSSOP)
• Off isolation is 90dB typ (CL = 15pF, RL = 50 ohm, VS = 1VRMS, f = 100KHz)
• 16-pin TSSOP package, temperature range from -40°C to 85°C