CNY66
DIP-4 HV CPL 15kV 700mil 50-300%CTR -e4
- RoHS 10 Compliant
- Tariff Charges
The CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm
- Rated recurring peak voltage (repetitive) VIORM = 1450 Vpeak
- Thickness through insulation greater than or equal to 3 mm
- Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI = 200
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 75 mA | ||
| Matte Tin | ||
| 260 | ||
| 50 mA | ||
| 32 V | ||
| 8200 Vrms | ||
| Through Hole | ||
| 1 | ||
| -55 to 85 °C | ||
| DC | ||
| 4PDIP | ||
| 4 | ||
| 20.4 x 9.6 x 6.1 mm | ||
| PDIP |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541498000 |
| Schedule B: | 8541498000 |