BPW17N
Phototransistor Chip Silicon 825nm 2-Pin T-3/4
- RoHS 10 Compliant
- Tariff Charges
The BPW17N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens. It is sensitive to visible and near infrared radiation. On PCB this package size enables assembly of arrays with 2.54 mm pitch.
- Package type: leaded
- Package form: T-¾
- Dimensions (in mm): Ø 1.8
- High photo sensitivity
- High radiant sensitivity
- Suitable for visible and near infrared radiation
- Fast response times
- Angle of half sensitivity: ? = ± 12°
- Comliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 24 | ||
| Water Clear | ||
| 1.8 mm | ||
| Domed | ||
| 260 | ||
| 50 mA | ||
| 200 nA | ||
| 5 V | ||
| Through Hole | ||
| 100 °C | ||
| 2T-3/4 | ||
| 825 nm | ||
| 2 | ||
| NPN | ||
| 3.3 x 2.4 x 2.9 mm | ||
| T-3/4 | ||
| Chip | ||
| Top View |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541498000 |
| Schedule B: | 8541498000 |