HL6545MG-A
660nm /130mW AlGaInP Laser Diode
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Manufacturer:USHIO
Product Category:
Optoelectronics, Infrared - IR Components, Laser Diodes
Avnet Manufacturer Part #: HL6545MG-A
Secondary Manufacturer Part#: HL6545MG-A
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RoHS 10 Compliant -
Tariff Charges
The HL6545MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as H/H type Recordable-DVD, and various other types of optical equipment.
- Operating temperature: 75°C Max (300 mW (pulse), pw = 30 ns, duty = 35 %)
- Visible light output : ?p = 660 nm Typ
- Low operating current :Iop (1) = 175 mA Typ (Po = 120 mW) Iop (2) = 350 mA Typ (Po = 300 mW (pulse), pw = 30 ns, duty = 35 %)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 12 ° | ||
| 19 ° | ||
| 210 mA | ||
| 130 mW | ||
| 75 mA | ||
| Through Hole | ||
| -10 to 75 °C | ||
| 3 | ||
| 3 | ||
| Single | ||
| 5.6 x 5.6 x 3.5 mm | ||
| MQW-LD | ||
| 664 nm |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541410000 |
| Schedule B: | 8541410000 |
Factory Lead Time: