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HL6364DG-A

642nm / 65mW AlGaInP Laser Diode

Manufacturer:USHIO
Product Category: Optoelectronics, Infrared - IR Components, Laser Diodes
Avnet Manufacturer Part #: HL6364DG-A
Secondary Manufacturer Part#: HL6364DG-A
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The HL6364DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

  • Visible light output : 642 nm Typ
  • Single longitudinal mode
  • Optical output power : 60 mW CW
  • Low operating current : 125 mA Typ
  • Low operating voltage : 2.7 V Max
  • Operating temperature : +50°C
  • TE mode oscillation

Technical Attributes

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ECCN / UNSPSC / COO

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Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8541410000
Schedule B: 8541410000
In Stock :  0
Additional inventory
Factory Lead Time: 90 Weeks
Price for: Each
Quantity:
Min:15  Mult:1  
USD $:
15+
$96.1961
100+
$88.39836
500+
$81.3713
1000+
$72.33422
5000+
$65.1125