HL6363MG-A
640nm / 45mW AlGaInP Laser Diode
Manufacturer:USHIO
Product Category:
Optoelectronics, Infrared - IR Components, Laser Diodes
Avnet Manufacturer Part #: HL6363MG-A
Secondary Manufacturer Part#: HL6363MG-A
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RoHS 10 Compliant -
Tariff Charges
The HL6363MG is a 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement
- Visible light output : 640 nm Typ
- Single longitudinal mode
- Optical output power : 40 mW CW
- Low operating current : 90 mA Typ
- Low operating voltage : 2.6 V Max
- Operating temperature : +50°C
- TE mode oscillation
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 13 ° | ||
| 24 ° | ||
| 110 mA | ||
| 45 mW | ||
| 60 mA | ||
| Through Hole | ||
| -10 to 50 °C | ||
| 3 | ||
| 30 V | ||
| 3 | ||
| Single | ||
| 5.6 x 5.6 x 3.5 mm | ||
| MQW-LD | ||
| 643 nm |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541410000 |
| Schedule B: | 8541410000 |
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