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TW083N65C,S1F

Name: TW083N65C,S1F
Brand: Toshiba
SKU: TW083N65C,S1F
Availability: InStock

Manufacturer:Toshiba

Product Category: Discretes, FETs, Silicon Carbide (SiC) MOSFETs & Modules

Avnet Manufacturer Part #: TW083N65C,S1F

Secondary Manufacturer Part#: TW083N65C,S1F

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	Description	Value
	Channel Type	N Channel
	Continuous Drain Current Id	30 A
	Drain Source On State Resistance	113 mOhm
	Drain Source Voltage Vds	650 V
	Gate Source Threshold Voltage Max	5 V
	Mosfet Module Configuration	Single
	No. of Pins	3
	Operating Temperature Max	175 °C
	Power Dissipation	111 W
	RDS(ON) Test Voltage	18 V
	Transistor Case Style	TO-247

In Stock : 90.0

Ships in 1 bus. day

Additional inventory

Factory Lead Time: 168 Weeks

Price for: Each

Quantity:

Min:1 Mult:1

USD $:

$6.97558

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