TPN5900CNH,L1Q
Power MOSFET, N Channel, 150 V, 9 A, 59 Milliohms, TSON Advance, 8 Pins, Surface Mount
Manufacturer:Toshiba
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: TPN5900CNH,L1Q
Secondary Manufacturer Part#: TPN5900CNH,L1Q
-
RoHS 10 Compliant -
Tariff Charges
- High-speed switching
- Small gate charge: QSW = 2.6 nC (typ.)
- Low drain-source on-resistance: Rds(ON) = 50 m? (typ.) (Vgs = 10 V)
- Low leakage current: Idss = 10 µA (max) (Vds = 150 V)
- Enhancement mode: Vth = 2.0 to 4.0 V (Vds = 10 V, Id = 0.2 mA)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 9 A | ||
| 59 mOhm | ||
| 150 V | ||
| 4 V | ||
| 8 | ||
| 150 °C | ||
| 39 W | ||
| U-MOSVIII-H Series | ||
| 10 V | ||
| TSON Advance | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
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