TLP2403(TP,F)

The TLP2403 consists of a high-output GaAlAs light-emitting diode coupled with a high-speed photodiode transistor chip. It is housed in the SO8 package. The TLP2403 uses a high-speed, high-gain detector element and thus is ideal for applications which require low-input current and high-speed data transmission.

• Package: SO8
• Operating temperature: -40 to 100 °C
• Current transfer ratio: 400 % (min) @If = 0.5 mA
• Maximum output current: 60 mA
• Propagation delay time: tpHL = 2 µs (typ.), tpLH = 4 µs (typ.) @ Rl = 4.7 k?, If = 0.5 mA
• Isolation voltage: 3750 VRMS (min)
• Safety standards
  • UL-approved: UL1577
  • cUL-approved: CSA Component Acceptance Service No.5A
  • Vde approved: EN60747-5-5