TJ60S06M3L(T6L1,NQ
Power MOSFET, P Channel, 60 V, 60 A, 11.2 Milliohms, DPAK+, 3 Pins, Surface Mount
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Manufacturer:Toshiba
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: TJ60S06M3L(T6L1,NQ
Secondary Manufacturer Part#: TJ60S06M3L(T6L1,NQ
-
RoHS 10 Compliant -
Tariff Charges
- AEC-Q101 qualified
- Low drain-source on-resistance: Rds(ON) = 8.6 m? (typ.) (Vgs = -10 V)
- Low leakage current: Idss = -10 µA (max) (Vds = -60 V)
- Enhancement mode: Vth = -2.0 to -3.0 V (Vds = -10 V, Id = -1 mA)
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| P Channel | ||
| 60 A | ||
| 11.2 mOhm | ||
| 60 V | ||
| 3 V | ||
| 3 | ||
| 175 °C | ||
| 100 W | ||
| U-MOSVI Series | ||
| AEC-Q101 | ||
| DPAK+ | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
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