2SC5200-O(Q)
Single Bipolar Transistor, NPN, 230 V, 15 A, 150 W, TO-3PL, 3 Pins, Through Hole
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Manufacturer:Toshiba
Product Category:
Discretes, Bipolar Transistors, Single Bipolar Transistors
Avnet Manufacturer Part #: 2SC5200-O(Q)
Secondary Manufacturer Part#: 2SC5200-O(Q)
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RoHS 10 Compliant -
Tariff Charges
2SC5200-O(Q) is a silicon NPN triple diffused type transistor for power amplifier application.
- High breakdown voltage VCEO = 230V (min)
- Complementary to 2SA1943
- Suitable for use in 100W high fidelity audio amplifier’s output stage
- 150W collector power dissipation (Tc=25°C), 200pF (VCB=10V, IE=0, f=1MHz) collector O/P capacitance
- Collector cut-off current is 5µA max (VCB = 230V, IE = 0A, Ta = 25°C)
- Emitter cut-off current is 5µA max (VEB = 5V, IC = 0A, Ta = 25°C)
- Collector-emitter breakdown voltage is 230V min (IC = 50mA, IB = 0A, Ta = 25°C)
- Collector-emitter saturation voltage is 0.4V typ (IC = 8A, IB = 0.8A, Ta = 25°C)
- Transition frequency is 30MHz typ (VCE = 5V, IC = 1A, Ta = 25°C)
- Junction temperature is 150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 230 V | ||
| 15 A | ||
| 80 | ||
| 3 | ||
| 150 °C | ||
| 150 W | ||
| TO-3PL | ||
| Through Hole | ||
| NPN | ||
| 30 MHz |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
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