EV2A16AVNYU35

The EV2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits. The EV2A16A is equipped with chip enable (E), write enable (W), and output enable (G) pins, allowing for significant system design flexibility without bus contention. Because the EV2A16A has separate byte-enable controls (LB and UB), individual bytes can be written and read.

MRAM is a nonvolatile memory technology that protects data in the event of power loss and does not require periodic refreshing. The EV2A16A is the ideal memory solution for applications that must permanently store and retrieve critical data quickly.

The EV2A16A is available in a 400-mil, 44-lead plastic small-outline TSOP type-II package RoHS compliant (MSL3 according to Jedec standard) with an industry-standard center power and ground SRAM pinout.

The EV2A16A is available in Industrial (-40°C to 110°C) and Military (-55°C to +125°C) temperature ranges.

• Single 3.3V Power Supply
• Industrial Temperature Range (-40°C to 110°C) and Military Temperature Range (-55°C to 125°C)
• Symmetrical High-speed Read and Write with Fast Access Time (35 ns)
• Flexible Data Bus Control: 8 bit or 16 bit Access
• Equal Address and Chip-enable Access Times
• Automatic Data Protection with Low-voltage Inhibit Circuitry to Prevent Writes on Power Loss
• All Inputs and Outputs are Transistor-transistor Logic (TTL) Compatible
• Fully Static Operation
• Full Nonvolatile Operation with 20 Years Minimum Data Retention