VNS3NV04DPTR-E
Power Load Distribution Switch, Low Side, 2 Outputs, 2 Channels, 5 A, SOIC-8
Click image to enlarge
Manufacturer:STMicroelectronics
Product Category:
Power Management, Power Load Distribution Switches
Avnet Manufacturer Part #: VNS3NV04DPTR-E
Secondary Manufacturer Part#: VNS3NV04DPTR-E
-
RoHS 10 Compliant -
Tariff Charges
VNS3NV04DPTR-E is an automotive OMNIFET II fully auto protected power MOSFET. It is made up of two monolithic chips (OMNIFET II) housed in a standard package. The OMNIFET II is designed using STMicroelectronics VI Power M0-3 technology and is intended for replacement of standard power MOSFET in up to 50kHz DC applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring voltage at the input pin.
- AEC-Q100 qualified, linear current limitation
- Thermal shutdown, short-circuit protection, integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin, ESD protection
- Direct access to the gate of the power MOSFET (analogue driving)
- Compatible with standard Power MOSFET
- Static drain-source on resistance is 120mohm max (VIN = 5V; ID = 1.5A; Tj = 25°C)
- Drain current limit is 5A typ (VIN = 5V; VDS = 13V, -40°C Tj 150°C)
- Drain-source clamp voltage is 45V typ (VIN = 0V, ID = 1.5A, -40°C Tj 150°C)
- SO-8 package, operating temperature range from -40°C to 150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 7 A | ||
| Gold | ||
| 240 | ||
| 3.5 A | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 120 mOhm | ||
| 150 °C | ||
| -40 °C | ||
| 8SO N | ||
| 8 | ||
| 5 x 4 x 1.65 mm | ||
| SOIC N | ||
| 0.1 mA | ||
| 0.12 Ohm | ||
| Low Side |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |
Ships
in 1 bus. day