VNLD5160TR-E
MOSFET DRVR 1-OUT Low Side Non-Inv 8-Pin SO T/R
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RoHS 10 Compliant -
Tariff Charges
The VNLD5160-E is a monolithic device made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the device in an overload condition. In case of long duration overload, the device limits the dissipated power to a safe level up to thermal shutdown intervention.Thermal shutdown, with automatic restart, allows the device to recover normal operation as soon as a fault condition disappears. Fast demagnetization of inductive loads is achieved at turn-off.
Automotive qualified Drain current: 3.5 A ESD protection Overvoltage clamp Thermal shutdown Current and power limitation Very low standby current Very low electromagnetic susceptibility Compliant with European directive 2002/95/EC Open drain status output Specially intended for R10W or 2xR5W automotive signal lamps
Technical Attributes
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| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| Low Side | ||
| 8.9 us | ||
| CMOS | ||
| CMOS, Logic, Logic | ||
| 11500 ns | ||
| 14100 ns | ||
| 13200 ns | ||
| 8900 ns | ||
| Surface Mount | ||
| 2 | ||
| 8 | ||
| 1 | ||
| 1 | ||
| 10 mA | ||
| -40 to 150 °C | ||
| 150 °C | ||
| -40 °C | ||
| 13.2 us | ||
| 8SO | ||
| 8 | ||
| MOSFET | ||
| 4.9 x 3.9 x 1.25 mm | ||
| 0 | ||
| Automotive | ||
| 5.5 V | ||
| 4.5 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |
Factory Lead Time: