VNLD5090TR-E
MOSFET DRVR 25A 2-OUT Lo Side Non-Inv 8-Pin SOIC T/R
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Manufacturer:STMicroelectronics
Product Category:
Power Management, Drivers & Controllers, Gate Drivers
Avnet Manufacturer Part #: VNLD5090TR-E
Secondary Manufacturer Part#: VNLD5090TR-E
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RoHS 10 Compliant -
Tariff Charges
The VNLD5090-E is a monolithic device made usingSTMicroelectronics VIPower technology, intended for driving resistiveor inductive loads with one side connected to the battery. Built-in thermal shutdown protectsthe chip from overtemperature and short-circuit. Output current limitation protects the devicein an overload condition. In case of long duration overload, the device limits the dissipatedpower to a safe level up to thermal shutdown intervention.Thermal shutdown, with automaticrestart, allows the device to recover normal operation as soon as a fault conditiondisappears. Fast demagnetization of inductive loads is achieved at turn-off.
Technical Attributes
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| Description | Value | |
|---|---|---|
| Non-Inverting | ||
| Low Side | ||
| 8 us | ||
| CMOS | ||
| CMOS, Logic, Logic | ||
| Tin | ||
| 240 | ||
| 2700 ns | ||
| 10000 ns | ||
| 3400 ns | ||
| 8000 ns | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 2 | ||
| 8 | ||
| 2 | ||
| 2 | ||
| -40 to 150 °C | ||
| 150 °C | ||
| -40 °C | ||
| 3.4 us | ||
| 8SOIC | ||
| 25 A | ||
| 8 | ||
| MOSFET | ||
| 4.9 x 3.9 x 1.5(Max) | ||
| No | ||
| SOIC | ||
| 5.5 V | ||
| 4.5 V | ||
| 13 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |
Factory Lead Time: