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STW58N65DM2AG

Trans MOSFET N-CH 650V 48A 3-Pin TO-247 Tube

Manufacturer:STMicroelectronics
Product Category: Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: STW58N65DM2AG
Secondary Manufacturer Part#: STW58N65DM2AG
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Designed for automotive applications and AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected

Technical Attributes

Find Similar Parts

Description Value
N Channel
48
65 mOhm
650
5
3
150 °C
360
AEC-Q101
TO-247
Through Hole

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8541290040
Schedule B: 8541290080
In Stock :  0
Additional inventory
Factory Lead Time: 140 Weeks
Price for: Each
Quantity:
Min:600  Mult:30  
USD $:
600+
$7.01876
1200+
$6.77528
2400+
$6.74053
4800+
$6.70578
9600+
$6.67104