STW12N150K5
Power MOSFET, N Channel, 1.5 kV, 7 A, 1.9 Ohm, TO-247, 3 Pins, Through Hole
Click image to enlarge
![STW12N150K5]()
Manufacturer:STMicroelectronics
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: STW12N150K5
Secondary Manufacturer Part#: STW12N150K5
-
RoHS 10 Compliant -
Tariff Charges
STW12N150K5 is a N-channel MDmesh™ K5 power MOSFET. It is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Suitable for switching applications.
- Industry’s lowest RDS(on) area, industry’s best figure of merit (FoM)
- Ultra low gate charge, 100% avalanche tested, Zener-protected
- 1500V min drain-source breakdown voltage (VGS = 0V, ID = 1mA, TCASE = 25°C)
- 1µA max zero gate voltage drain current (VGS = 0V, VDS = 1500V, TCASE = 25°C)
- 4V typ gate threshold voltage (VDS = VGS, ID = 100µA, TCASE = 25°C)
- 1.6ohm typ static drain-source on resistance (VGS = 10V, ID = 3.5A, TCASE = 25°C)
- 1360pF typ input capacitance (VGS = 0V, VDS = 10 V, f = 1MHz, TCASE = 25°C)
- 80pF typ output capacitance (VGS = 0V, VDS = 10 V, f = 1MHz, TCASE = 25°C)
- 47nC typ total gate charge (VDD = 1200V, ID = 7A, VGS = 10V, TCASE = 25°C)
- TO-247 package, operating junction temperature range from -55 to 150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 7 A | ||
| 1.9 Ohm | ||
| 1.5 kV | ||
| 5 V | ||
| 3 | ||
| 150 °C | ||
| 250 W | ||
| MDmesh K5 Series | ||
| TO-247 | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Ships
in 1 bus. day