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STPSC4H065B-TR

Diode Schottky 650V 4A 3-Pin(2+Tab) DPAK T/R

Manufacturer:STMicroelectronics
Avnet Manufacturer Part #: STPSC4H065B-TR
Secondary Manufacturer Part#: STPSC4H065B-TR
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate much higher voltages and electric fields. The low reverse recovery characteristics increase efficiency in all systems thanks to their low forward voltage and make ST's silicon-carbide diodes a key contributor to energy savings. These savings are found in SMPS applications as well as solar energy conversion, EV or HEV charging stations, and many more. The product ranges from 600V to 1200Vin through hole and SMD packages.

  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins:
  • Insulated voltage: 2500 V rms
  • Typical package capacitance: 7 pF
  • Technical Attributes

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    Description Value
    8
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    3
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    STPSC4H065 Series
    650
    23.5

    ECCN / UNSPSC / COO

    Description Value
    Country of Origin: RECOVERY FEE
    ECCN: EAR99
    HTSN: 8541100080
    Schedule B: 8541100080
    In Stock :  0
    Additional inventory
    Factory Lead Time: 133 Weeks
    Price for: Each
    Quantity:
    Min:2500  Mult:2500  
    USD $:
    2500+
    $0.80014
    5000+
    $0.75689
    10000+
    $0.73697
    20000+
    $0.71808
    40000+
    $0.70012