STPSC10H065G-TR
Diode Schottky 650V 10A 3-Pin(2+Tab) D2PAK T/R
Click image to enlarge
Manufacturer:STMicroelectronics
Product Category:
Discretes, Diodes & Rectifiers, Silicon Carbide Schottky Diodes
Avnet Manufacturer Part #: STPSC10H065G-TR
Secondary Manufacturer Part#: STPSC10H065G-TR
-
RoHS 10 Compliant -
Tariff Charges
The STPSC10H065G-TR is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. It is especially suited for use in PFC applications and this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
- No or negligible reverse recovery
- Switching behaviour independent of temperature
- High forward surge capability
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 10 | ||
| TO-263 (D2PAK) | ||
| Single | ||
| Surface Mount | ||
| 3 | ||
| 175 °C | ||
| STPSC10H065 Series | ||
| 650 | ||
| 28.5 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541100080 |
| Schedule B: | 8541100080 |
Factory Lead Time: