STPSC10H065DI
Silicon Carbide Schottky Diode, Single, 650 V, 10 A, 28.5 nC, TO-220AC
Click image to enlarge
Manufacturer:STMicroelectronics
Product Category:
Discretes, Diodes & Rectifiers, Silicon Carbide Schottky Diodes
Avnet Manufacturer Part #: STPSC10H065DI
Secondary Manufacturer Part#: STPSC10H065DI
-
RoHS 10 Compliant -
Tariff Charges
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 10 | ||
| TO-220AC | ||
| Single | ||
| Through Hole | ||
| 2 | ||
| 175 °C | ||
| STPSC10H065 Series | ||
| 650 | ||
| 28.5 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541100080 |
| Schedule B: | 8541100080 |
Ships
in 1 bus. day