STP24N60DM2
Power MOSFET, N Channel, 600 V, 18 A, 200 Milliohms, TO-220, 3 Pins, Through Hole
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Manufacturer:STMicroelectronics
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: STP24N60DM2
Secondary Manufacturer Part#: STP24N60DM2
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RoHS 10 Compliant -
Tariff Charges
STP24N60DM2 is a N-channel 600V, 0.175 ohm typ, 18A FDmesh II Plus™ low Qg Power MOSFET in a TO-220 package. This FDmesh II Plus™ low Qg Power MOSFET with intrinsic fast-recovery body diode is produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. Therefore, suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
- Extremely low gate charge and input capacitance
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Extremely high dv/dt and avalanche capabilities
- Operating junction temperature of 150°C
- Suited for switching applications
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 18 | ||
| 200 | ||
| 650 | ||
| 5 | ||
| 3 | ||
| 150 °C | ||
| 150 | ||
| TO-220 Type A | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: