STP110N7F6
MOS Power Transistors LV ( 41V-100V)
- RoHS 10 Compliant
- Tariff Charges
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 3 | ||
| 175 °C | ||
| STripFET F6 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |