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STI150N10F7

Power MOSFET, N Channel, 100 V, 110 A, 4.2 Milliohms, TO-262 (I2PAK), 3 Pins, Through Hole

Manufacturer:STMicroelectronics
Product Category: Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: STI150N10F7
Secondary Manufacturer Part#: STI150N10F7
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

  • Among the lowest RDS(on)on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness
  • Technical Attributes

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    Description Value
    N Channel
    110 A
    4.2 mOhm
    100 V
    4.5 V
    3
    175 °C
    250 W
    STripFET F7 Series
    TO-262 (I2PAK)
    Through Hole

    ECCN / UNSPSC / COO

    Description Value
    Country of Origin: UNKNOWN
    ECCN: EAR99
    HTSN: 8541290040
    Schedule B: 8541290080
    In Stock :  0
    Additional inventory
    Factory Lead Time: 777 Weeks
    Price for: Each
    Quantity:
    Min:1000  Mult:1000  
    USD $: