STGWT80V60DF
Trans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube
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Manufacturer:STMicroelectronics
Product Category:
Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: STGWT80V60DF
Secondary Manufacturer Part#: STGWT80V60DF
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RoHS 10 Compliant -
Tariff Charges
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 80 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 1.85 | ||
| 600 | ||
| 120 | ||
| 3 | ||
| 175 °C | ||
| 469 | ||
| V Series | ||
| TO-3P | ||
| Through Hole |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542330001 |
| Schedule B: | 8542330000 |
Factory Lead Time: