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STGWT80H65DFB

Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube

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STGWT80H65DFB
  • STGWT80H65DFB
Manufacturer:STMicroelectronics
Product Category: Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: STGWT80H65DFB
Secondary Manufacturer Part#: 45AC7598
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • Maximum junction temperature: TJ= 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat)= 1.6 V (typ.) @ IC= 80 A
  • Tight parameter distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode

    • Technical Attributes

    Find Similar Parts

    		 Description Value
    		1.6
    		650
    		120
    		3
    		175 °C
    		470
    		HB Series
    		TO-3P
    		Through Hole

    ECCN / UNSPSC / COO

    Description Value
    Country of Origin: RECOVERY FEE
    ECCN: EAR99
    HTSN: 8541290085
    Schedule B: 8541290080
    In Stock :  0
    Additional inventory
    Factory Lead Time: 120 Weeks
    Price for: Each
    Quantity:
    Min:1  Mult:1  
    USD $:
    1+
    $8.67
    10+
    $6.03
    25+
    $5.8
    60+
    $5.61
    120+
    $5.45