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STGWT30H60DFB

IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-3P, 3 Pins

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STGWT30H60DFB
  • STGWT30H60DFB
Manufacturer:STMicroelectronics
Product Category: Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: STGWT30H60DFB
Secondary Manufacturer Part#: STGWT30H60DFB
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

  • Maximum junction temperature: TJ= 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat)= 1.55 V (typ.) @ IC= 30 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode

    • Technical Attributes

    Find Similar Parts

    		 Description Value
    		1.55
    		600
    		60
    		3
    		175 °C
    		260
    		HB Series
    		TO-3P
    		Through Hole

    ECCN / UNSPSC / COO

    Description Value
    Country of Origin: RECOVERY FEE
    ECCN: EAR99
    HTSN: 8541290075
    Schedule B: 8541290080
    In Stock :  600.0
    Ships in 1 bus. day
    Additional inventory
    Factory Lead Time: 98 Weeks
    Price for: Each
    Quantity:
    Min:300  Mult:1  
    USD $:
    300+
    $1.33973
    310+
    $1.31346
    610+
    $1.29484
    1500+
    $1.27675
    3000+
    $1.256